ENGLISH
[ JAPANESE PAGE --PLEASE SEE with JAPANESE FONT on Japanese page]
1998 作成
*****ＭＡＴＬＡＢによる半導体解析*****
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テキスト名：「 Semiconductor Device Fundamentals 」
INDEX
Part1 Semiconductor Fundamentals
Chapter1 Semiconductors: A General Information
1.1 General Materials Properties
1.1.1 Composition
1.1.2 Purity
1.1.3 Structure
1.2 Crystal Structure
1.3 Crystal Growth
1.4 Summary
Problems
Chapte2 Carrier Modeling
2.1 The Quantization Concept
2.2 Semiconductor Models
2.3 Carrier Properties
2.4 State and Carrier Distribution
2.5 Equilibrium Carrier Concentrations
2.6 Summary and Concluding Comments
Problem
Chapter 3 Carrier Action
3.1 Drift
3.2 Diffusion
3.3 Recombination-Generation
3.4 Equations of State
3.5 Supplemental Concepts
3.6 Summary and Concluding Comments
Problems
Chapter 4 Basics of Device Fabrication
4.1 Fabrication Processes
4.2 Device Fabrication Examples
4.3 Summary
R1 Part 1 Supplement and Review
Part 2 pn Junction Diodes
Chapter 5 pn Junction Electrostatics
5.1 Preliminaries
5.2 Quantitative Electrostatistic Relationships
5.3 Summary
Problems
Chapter 6 pn Junction Diode : I-V Characteristics
6.1 The Ideal Diode Equation
6.2 Derivation from the Ideal
6.3 Special Considerations
6.4 Summary and Concluding Comments
Problems
Chapter 7 pn Junction Diode : Small-Signal Admittance
7.1 Introduction
7.2 Revese-Bias Junction capacitance
7.3 Forward-Bias Diffusion Admittance
7.4 Summary
Problems
Chapter 8 pn Junction Diode : Transient Response
8.1 Turn-Off Transient
8.2 Turn-On Transient
8.3 Summary
Problems
Chapter 9 Optoelectronic Diodes
9.1 Introduction
9.2 Photodiode
9.3 Solar Cells
9.4 LED's
Part IIB BJTs and Other Junction Devices
Chapter 10 BJT Fundamentals
10.1 Terminology
10.2 Fabrication
10.3 Electrostatics
10.4 Introductory Operational Considerations
10.5 Performance Parameters
10.6 Summary
Problems
Chapter 10 BJT Fundamentals
11.1 Ideal Transistor Analysis
11.2 Deviations from the Ideal
11.3 Modern BJT Structure
11.4 Summary
Problems
Chapter 11 BJT Dynamic Response Modeling
12.1 Smal-Signal Equivalent Circuits
12.2 Transient (Switching ) Response
12.3 Summary
Problems
Chapter 13 PNPN Devices
13.1 Silicon Controlled Rectifier
13.2 SCR Operational Theory
13.3 Practical Turn-on/Turn-off Considerations
13.4 Other PNPN Devices
Chapter 14 MS Contacts and Schottky Diodes
14.1 ideal MS Contucts
14.2 Schottky Diode
14.3 Practical Contact Considerations
14.4 Summary
Problems
Part III Field Effect Devices
Chapter 15 Field Effect Introduction-The J-FET and MESFET
15.1 General Introduction
15.2 J-FET
15.3 MESFET
15.4 Summary
Problems
Chapter 16
16.1 Ideal Structure Definition
16.2 Electrostatics-Mostly Qualitative
16.3 Electrostatics-Quantitative Formation
16.4 Capacitance-Voltage Charcteristics
16.5 Summary and Concluding Comments
Problems
Chapter 17
17.1 Quantitative Theory of Operation
17.2 Quantitative Id-Vd Relationships
17.3 a.c Response
17.4 Summary
Problems
Chapter 18
18.1 Metal-Semiconductor Workfunction Difference
18.2 Oxide Charges
18.3 MOSFET Threshold Considerations
Chapter 19
19.1 Small Dimension Effects
19.2 Select Structure Survey
JAPANESE
*****INDEX TO SEMICONDUCTOR*****
[MOD 31.MAR.1997 ]